The IPB65R380C6ATMA1 is a N-CHANNEL MOSFET from Infineon with a Drain to Source Breakdown Voltage of 700V and a Continuous Drain Current of 10.6A. It features a low Drain to Source Resistance of 380mR and a fast switching time with a Fall Time of 11ns and a Turn-On Delay Time of 12ns. The device is packaged in a TO-263-3 and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 83W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB65R380C6ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB65R380C6ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 380mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 710pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB65R380C6ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
