IPB65R380C6ATMA1

Name: IPB65R380C6ATMA1 Infineon
Brand: Infineon
SKU: IPB65R380C6ATMA1

Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

PolarityN-CHANNEL

Power83W

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Infineon IPB65R380C6ATMA1 technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	10.6A
Drain to Source Breakdown Voltage	700V
Drain to Source Resistance	380mR
Fall Time	11ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	710pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	83W
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	83W
Radiation Hardening	No
Rds On Max	380mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	110ns
Turn-On Delay Time	12ns