N-Channel Power MOSFET, 650V breakdown voltage, 6A continuous drain current, and 0.66 Ohm drain-source resistance. Features include 10ns fall time, 9ns turn-on delay, and 40ns turn-off delay. This silicon, metal-oxide semiconductor FET is housed in a TO-263-3 package, offering 89W max power dissipation and operating from -55°C to 150°C. It is halogen-free, lead-free, and RoHS compliant.
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Infineon IPB65R660CFD technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 660mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 1R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| Width | 9.45mm |
| RoHS | Compliant |
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