The IPB65R660CFDAATMA1 is a surface mount power MOSFET from Infineon with a maximum operating temperature of -40°C to 150°C. It features a maximum drain to source voltage of 650V and a continuous drain current of 6A. The device is packaged in a TO-263-3 case and is available in a tape and reel packaging. The MOSFET is compliant with AEC-Q101 and is halogen free.
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Infineon IPB65R660CFDAATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 543pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB65R660CFDAATMA1 to view detailed technical specifications.
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