The IPB65R660CFDATMA1 is a 650V N-Channel MOSFET from Infineon with a continuous drain current of 6A. It features a TO-263-3 package and is halogen free. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 62.5W. It is RoHS compliant and available in a cut tape packaging.
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Infineon IPB65R660CFDATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 615pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB65R660CFDATMA1 to view detailed technical specifications.
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