Infineon
IPB70N04S3-07
Power Field-Effect Transistor, 70A I(D), 40V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
PackageTO-263-3
PolarityN-CHANNEL
Power79W
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Technical Specifications
Infineon IPB70N04S3-07 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
4.4mm
Input Capacitance
2.7nF
Length
10mm
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
79W
Rds On Max
6.2mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
17ns
Turn-On Delay Time
13ns
Width
9.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPB70N04S3-07 Datasheet
Download the complete datasheet for Infineon IPB70N04S3-07 to view detailed technical specifications.
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