N-Channel Power MOSFET, 100V Drain-Source Voltage, 70A Continuous Drain Current, and 11.8mΩ On-State Resistance. This silicon Metal-Oxide Semiconductor FET features a low 10ns turn-on delay and 28ns turn-off delay, with a maximum power dissipation of 125W. Packaged in a TO-263-3 surface-mount package, it operates from -55°C to 175°C and is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon IPB70N10S3L12ATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.55nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| On-State Resistance | 11.8mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Rds On Max | 11.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB70N10S3L12ATMA1 Datasheet
Download the complete datasheet for Infineon IPB70N10S3L12ATMA1 to view detailed technical specifications.
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