The IPB70P04P409ATMA1 is a high-power N-channel MOSFET from Infineon, designed for automotive applications. It features a maximum continuous drain current of 72A and a maximum drain-to-source voltage of -40V. The device is packaged in a TO-263-3 plastic package and is rated for operation over a temperature range of -55°C to 175°C. The MOSFET is compliant with AEC-Q101 and RoHS standards.
PackageTO-263-3
MountingSurface Mount
Power75W
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Technical Specifications
Infineon IPB70P04P409ATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 72A |
| Drain to Source Voltage (Vdss) | -40V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.81nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| On-State Resistance | 9.1mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 75W |
| Rds On Max | 9.1mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB70P04P409ATMA1 Datasheet
Download the complete datasheet for Infineon IPB70P04P409ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.