N-channel MOSFET with 30V drain-source breakdown voltage and 80A continuous drain current. Features 2.4mΩ on-state resistance and 136W power dissipation. Operates from -55°C to 175°C, packaged in a TO-263-3 surface-mount package. Includes 13ns fall time and 14ns turn-on delay.
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Infineon IPB80N03S4L02ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 9.75nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Number of Channels | 1 |
| On-State Resistance | 2.4mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 14ns |
| Width | 9.25mm |
| RoHS | Compliant |
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