N-channel Power MOSFET, 40V Vds, 80A continuous drain current, and 3.2mΩ Rds On. Features include 188W power dissipation, 175°C max operating temperature, and a TO-263-3 package. This silicon, metal-oxide semiconductor FET offers fast switching with a 14ns fall time and 25ns turn-on delay. It is halogen-free, lead-free, and RoHS compliant.
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Infineon IPB80N04S3-03 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7.3nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 188W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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