The IPB80N04S403ATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 94W and a maximum drain to source voltage of 40V. The device is packaged in a TO-263-3 package and is halogen free. It is also RoHS compliant and has a maximum continuous drain current of 80A. The MOSFET has a maximum Rds on value of 3.3mR and a turn-on delay time of 14ns. It is part of the OptiMOS series and is available on tape and reel.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon IPB80N04S403ATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.26nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N04S403ATMA1 Datasheet
Download the complete datasheet for Infineon IPB80N04S403ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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