N-Channel Power MOSFET, 55V Vds, 80A Continuous Drain Current, and 6.3mΩ Rds On. Features include a 250W power dissipation, 175°C max operating temperature, and fast switching times with 16ns turn-on and 36ns fall times. Packaged in a TO-263-3 surface-mount package, this silicon metal-oxide semiconductor FET is RoHS compliant and halogen-free.
PackageTO-263-3
PolarityN-CHANNEL
Power250W
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Technical Specifications
Infineon IPB80N06S2-07 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 3.4nF |
| Length | 10mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 6.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 16ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N06S2-07 Datasheet
Download the complete datasheet for Infineon IPB80N06S2-07 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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