N-Channel Power MOSFET, 55V Vds, 80A continuous drain current, and 5.2mΩ Rds On. Features include a 300W power dissipation, 175°C max operating temperature, and a TO-263-3 package. This silicon metal-oxide semiconductor FET offers fast switching with a 22ns fall time and 48ns turn-off delay. It is RoHS compliant and halogen-free.
PackageTO-263-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPB80N06S2-H5 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 4.4nF |
| Length | 10mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 23ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N06S2-H5 Datasheet
Download the complete datasheet for Infineon IPB80N06S2-H5 to view detailed technical specifications.
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