N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers low on-state resistance of 6.7mΩ (max) and 5.3mΩ (typ) for efficient power switching. Operates within a wide temperature range of -55°C to 175°C with a maximum power dissipation of 210W. Packaged in a TO-263-3 surface-mount package, this halogen-free component is supplied on tape and reel.
PackageTO-263-3
PolarityN-CHANNEL
Power210W
Quick Jump:
Technical Specifications
Infineon IPB80N06S2L07ATMA3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 5.3mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.16nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| On-State Resistance | 6.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 210W |
| Rds On Max | 6.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N06S2L07ATMA3 Datasheet
Download the complete datasheet for Infineon IPB80N06S2L07ATMA3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
