N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers low on-state resistance of 6.7mΩ (max) and 5.3mΩ (typ) for efficient power switching. Operates within a wide temperature range of -55°C to 175°C with a maximum power dissipation of 210W. Packaged in a TO-263-3 surface-mount package, this halogen-free component is supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB80N06S2L07ATMA3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB80N06S2L07ATMA3 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 5.3mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.16nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| On-State Resistance | 6.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 210W |
| Rds On Max | 6.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB80N06S2L07ATMA3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
