The IPB80N06S2LH5ATMA1 is a surface mount MOSFET with a continuous drain current of 80A and a gate to source voltage of 20V. It operates within a temperature range of -55°C to 175°C. The device is packaged in a TO-263 package and is available on tape and reel. It has a fall time of 22ns and turn-off delay times of 75ns. The MOSFET is not radiation hardened and is not RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon IPB80N06S2LH5ATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 80A |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon IPB80N06S2LH5ATMA1 Datasheet
Download the complete datasheet for Infineon IPB80N06S2LH5ATMA1 to view detailed technical specifications.
No datasheet is available for this part.