The IPB80N06S3-05 is a high-power N-channel MOSFET from Infineon, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 165W and a continuous drain current of 80A. The device is packaged in a TO-263-3 surface mount package and is RoHS compliant. It has a gate to source voltage of 20V and a drain to source voltage of 55V.
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Infineon IPB80N06S3-05 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.76nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 165W |
| Rds On Max | 5.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB80N06S3-05 to view detailed technical specifications.
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