The IPB80N06S407ATMA1 is an N-channel MOSFET from Infineon with a maximum continuous drain current of 80A and a drain to source voltage of 60V. It features a fast switching time with a fall time of 5ns and a turn-off delay time of 23ns. The device is packaged in a TO-263-3 and is suitable for surface mount applications. It operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
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Infineon IPB80N06S407ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 79W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB80N06S407ATMA1 to view detailed technical specifications.
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