N-Channel Power MOSFET, 60V Vds, 80A Continuous Drain Current, and 7.1mΩ Drain-to-Source Resistance. This single-element silicon FET features a TO-263-3 surface mount package, 175°C maximum operating temperature, and 79W power dissipation. It includes 4.5nF input capacitance, 15ns turn-on delay, and 23ns turn-off delay, designed for automotive applications with AEC-Q101 qualification.
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Infineon IPB80N06S407ATMA2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 7.1mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 4.5nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.068654oz |
| Width | 9.25mm |
| RoHS | Compliant |
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