N-channel power MOSFET, 60V drain-source breakdown voltage, 80A continuous drain current, and 4.8mΩ on-state resistance. This silicon metal-oxide semiconductor FET features a TO-263-3 surface-mount package, 107W power dissipation, and a maximum operating temperature of 175°C. Designed for automotive applications and AEC-Q101 qualified, it offers fast switching with turn-on delay of 14ns and fall time of 13ns.
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Infineon IPB80N06S4L05ATMA2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 8.18nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 4.8mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Rds On Max | 5.1mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.068654oz |
| Width | 9.25mm |
| RoHS | Compliant |
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