N-Channel Power MOSFET, 60V Vdss, 80A continuous drain current, and 6.4mΩ low Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-263-3 surface mount package, 175°C max operating temperature, and 79W max power dissipation. Designed for automotive applications with AEC-Q101 qualification, it offers fast switching speeds with 10ns turn-on and 50ns turn-off times. RoHS compliant and halogen-free.
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Infineon IPB80N06S4L07ATMA2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 6.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 5.68nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 6.7mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.068654oz |
| Width | 9.25mm |
| RoHS | Compliant |
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