N-channel Power MOSFET, 75V Vds, 80A continuous drain current, and 7.1mΩ on-state resistance. Features a 300W power dissipation, 4.7nF input capacitance, and operates from -55°C to 175°C. Packaged in a TO-263-3 surface-mount package, this silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 26ns and fall time of 30ns.
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Infineon IPB80N08S207ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 4.7nF |
| Lead Free | Contains Lead |
| Length | 10.31mm |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| On-State Resistance | 7.1mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 7.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 26ns |
| Width | 9.45mm |
| RoHS | Compliant |
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