P-channel Power MOSFET with 80A continuous drain current and -30V drain-to-source breakdown voltage. Features low on-state resistance of 4.1mR and a maximum power dissipation of 137W. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-263-3 surface-mount package, this RoHS compliant component is supplied on tape and reel.
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Infineon IPB80P03P4L04ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 5V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 11.3nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 137W |
| On-State Resistance | 4.1mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 137W |
| Rds On Max | 4.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 17ns |
| Width | 9.25mm |
| RoHS | Compliant |
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