Power Field-Effect Transistor, 80A I(D), 30V, 0.0069ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Infineon IPB80P03P4L07ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 5V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| On-State Resistance | 6.9mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 88W |
| Rds On Max | 6.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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