P-channel MOSFET, 80A continuous drain current, 40V drain-source voltage, and 7.4mΩ drain-source resistance. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface-mount package, 88W power dissipation, and operates from -55°C to 175°C. It offers 25ns turn-on and 34ns turn-off delay times, with 6.085nF input capacitance. RoHS compliant and halogen-free, this component is suitable for automotive applications.
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Infineon IPB80P04P407ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | -40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 6.085nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 88W |
| Rds On Max | 7.4mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.068654oz |
| Width | 9.25mm |
| RoHS | Compliant |
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