Power Field-Effect Transistor, 80A I(D), 40V, 0.0064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Infineon IPB80P04P4L-06 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | -80A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 6.4mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 5.06nF |
| Length | 10mm |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 88W |
| Rds On Max | 6.4mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 17ns |
| Width | 9.25mm |
| RoHS | Compliant |
No datasheet is available for this part.
