The IPBE65R050CFD7AATMA1 is a 650V CoolMOS™ CFD7A automotive-qualified high voltage superjunction MOSFET. It features an integrated fast body diode designed for high efficiency and reliability in resonant switching topologies. Optimized for higher battery voltages up to 475V, it is specifically address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. The part utilizes a Kelvin-source concept in the D2PAK 7-pin package to provide enhanced efficiency and thermal behavior.
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| Drain-Source Voltage (Vds) | 650V |
| Drain-Source On-State Resistance (Rds(on)) Max | 50mΩ |
| Continuous Drain Current (Id) | 45A |
| Gate-Source Threshold Voltage (Vgs(th)) Typ | 4V |
| Total Gate Charge (Qg) Typ | 102nC |
| Power Dissipation (Pd) | 227W |
| Energy stored in output capacitance (Eoss) @ 400V | 13.0µJ |
| Pulsed Drain Current (Id,pulse) | 211A |
| Body diode diF/dt | 1300A/µs |
| Operating Temperature Range | -40 to 150°C |
| Input Capacitance (Ciss) @ 400V | 4975pF |
| Aec Qualification | AEC-Q101 |
| RoHS | ROHS3 Compliant |
| Moisture Sensitivity Level | 1 (Unlimited) |
