N-Channel Power MOSFET featuring 100A continuous drain current and 40V drain-source voltage. Offers a low on-resistance of 0.0025 ohms. This single-element silicon Metal-oxide Semiconductor FET is housed in a TDSON-8-34 package with 8 pins.
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Infineon IPC100N04S5L1R9ATMA1 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IPC100N04S5L1R9ATMA1 to view detailed technical specifications.
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