N-Channel Power MOSFET, 60V Drain-Source Voltage, 100A Continuous Drain Current, and 3.4mΩ Rds On. This silicon Metal-Oxide-Semiconductor FET features a TO-252-3 surface mount package, 167W power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 38ns turn-on delay, 16ns fall time, and 63ns turn-off delay, with an input capacitance of 11nF. This component is RoHS compliant and Halogen Free.
PackageTO-252-3
MountingSurface Mount
Power167W
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Technical Specifications
Infineon IPD034N06N3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 11nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 167W |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 38ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD034N06N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD034N06N3GATMA1 to view detailed technical specifications.
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