Infineon
IPD036N04LG
Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
PackageTO-252-3
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Technical Specifications
Infineon IPD036N04LG technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 6.3nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 3.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 9.3ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD036N04LG Datasheet
Download the complete datasheet for Infineon IPD036N04LG to view detailed technical specifications.
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