N-channel MOSFET, 40V drain-source voltage, 90A continuous drain current, and 0.0049 ohm on-resistance. This single-element silicon power transistor features a metal-oxide semiconductor field-effect structure. Operating across a wide temperature range from -55°C to 175°C, it is housed in a TO-252 package.
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Technical Specifications
Infineon IPD036N04LGATMA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPD036N04LGATMA1 Datasheet
Download the complete datasheet for Infineon IPD036N04LGATMA1 to view detailed technical specifications.
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