
The IPD03N03LAG is a surface mount N-channel power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 115W and a maximum drain to source breakdown voltage of 25V. The device features an input capacitance of 5.2nF and a gate to source voltage of 20V. It is lead free and RoHS compliant, packaged in a tape and reel format with 2500 units per reel.
Infineon IPD03N03LAG technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Current Rating | 90A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 6.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD03N03LAG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.