P-channel power MOSFET for surface mount applications, featuring a continuous drain current of 70A and a drain-to-source voltage of -30V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 4.2mΩ at a gate-source voltage of 10V, with a maximum power dissipation of 150W. The component operates within a temperature range of -55°C to 175°C and is housed in a TO-252 plastic package. Key switching characteristics include a turn-on delay time of 21ns and a fall time of 22ns.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD042P03L3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 12.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 4.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 89ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD042P03L3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD042P03L3GATMA1 to view detailed technical specifications.
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