The IPD048N06L3GBTMA1 is a 60V N-Channel MOSFET from Infineon, featuring a continuous drain current of 90A and a maximum operating temperature range of -55°C to 175°C. It has a package type of TO-252-3 and is mounted using a surface mount method. The device is not halogen free and contains lead, but is RoHS compliant. It has a maximum power dissipation of 115W and a maximum dual supply voltage of 60V.
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Infineon IPD048N06L3GBTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 8.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 115W |
| Rds On Max | 4.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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