N-channel MOSFET with 30V drain-source breakdown voltage and 90A continuous drain current. Features low Rds(on) of 4.1mΩ and 5.8Ω, 115W maximum power dissipation, and operates within a -55°C to 175°C temperature range. Surface mountable in a TO-252-3 package, this RoHS compliant component offers fast switching with turn-on delay of 14ns and fall time of 6ns.
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Infineon IPD04N03LBG technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.8R |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Rds On Max | 4.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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