N-channel power MOSFET featuring 30V drain-source breakdown voltage and 50A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 5mΩ on-state resistance and a maximum power dissipation of 68W. Designed for surface mounting in a TO-252 package, it operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include 3.2nF input capacitance and fast switching times with a 6.7ns turn-on delay.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD050N03LGATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 3.2nF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| On-State Resistance | 5mR |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6.7ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD050N03LGATMA1 Datasheet
Download the complete datasheet for Infineon IPD050N03LGATMA1 to view detailed technical specifications.
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