N-channel power MOSFET featuring 30V drain-source breakdown voltage and 50A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 5mΩ on-state resistance and a maximum power dissipation of 68W. Designed for surface mounting in a TO-252 package, it operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include 3.2nF input capacitance and fast switching times with a 6.7ns turn-on delay.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD050N03LGATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD050N03LGATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 3.2nF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| On-State Resistance | 5mR |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6.7ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD050N03LGATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
