N-Channel Power MOSFET, 60V Vdss, 45A continuous drain current, and 5.3mR Rds On resistance. This silicon, metal-oxide semiconductor FET features a TO-252-3 (DPAK) surface-mount package. It operates within a temperature range of -55°C to 175°C and offers a maximum power dissipation of 83W. The component is RoHS compliant and supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD053N06NATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD053N06NATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Resistance | 5.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 5.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD053N06NATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
