N-Channel Power MOSFET, 60V Vdss, 45A continuous drain current, and 5.3mR Rds On resistance. This silicon, metal-oxide semiconductor FET features a TO-252-3 (DPAK) surface-mount package. It operates within a temperature range of -55°C to 175°C and offers a maximum power dissipation of 83W. The component is RoHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power3W
Quick Jump:
Technical Specifications
Infineon IPD053N06NATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Resistance | 5.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 5.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD053N06NATMA1 Datasheet
Download the complete datasheet for Infineon IPD053N06NATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
