N-Channel Power MOSFET, 80V Vdss, 90A continuous drain current, and 5.3mΩ Rds On. Features a TO-252-3 surface mount package, 150W max power dissipation, and operates from -55°C to 175°C. This silicon, metal-oxide semiconductor FET offers fast switching with 18ns turn-on and 10ns fall times, and is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD053N08N3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.75nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| On-State Resistance | 5.3mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 5.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD053N08N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD053N08N3GATMA1 to view detailed technical specifications.
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