N-Channel Power MOSFET, TO-252 package, featuring 30V drain-source voltage and 50A continuous drain current. Offers a low 6mΩ on-state resistance (Rds On) and 56W maximum power dissipation. Designed for surface mounting with a 2.4nF input capacitance and 5ns turn-on delay. Operates across a wide temperature range from -55°C to 175°C, with RoHS compliance.
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Infineon IPD060N03LGATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 2.4nF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Surface Mount |
| On-State Resistance | 6mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| Width | 6.22mm |
| RoHS | Compliant |
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