N-Channel Power MOSFET, 30V Vds, 50A continuous drain current, and 7.5mΩ Rds(on) at 10V Vgs. Features a TO-252 package for surface mounting, 175°C maximum operating temperature, and 47W power dissipation. This silicon Metal-oxide Semiconductor FET offers a 2.8ns fall time and 1.9nF input capacitance. RoHS compliant and halogen-free.
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Infineon IPD075N03LGATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Surface Mount |
| On-State Resistance | 7.5mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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