N-Channel Power MOSFET, 100V drain-source voltage, 80A continuous drain current, and 8.2mΩ Rds(on) max. Features a TO-252 package for surface mounting, 125W max power dissipation, and operates from -55°C to 175°C. Includes 3.98nF input capacitance, 8ns fall time, 18ns turn-on delay, and 31ns turn-off delay.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD082N10N3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 3.98nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 8.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD082N10N3GATMA1 Datasheet
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