Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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Infineon IPD096N08N3GATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Resistance | 7.9mR |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.41nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 9.6mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 100W |
| Rds On Max | 9.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-On Delay Time | 13ns |
| RoHS | Compliant |
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