The IPD100N04S402ATMA1 is a surface mount N-Channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 150W and a maximum drain to source voltage of 40V. The device is packaged in a TO-252-3 package and is RoHS compliant. It features a maximum continuous drain current of 100A and a maximum gate to source voltage of 20V.
PackageTO-252-3
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon IPD100N04S402ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.43nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD100N04S402ATMA1 Datasheet
Download the complete datasheet for Infineon IPD100N04S402ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
