N-channel power MOSFET featuring 60V drain-source breakdown voltage and 100A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 3.5mΩ (typical) and 2.8mΩ (max). Designed for surface mounting in a TO-252 package, it operates from -55°C to 175°C with a maximum power dissipation of 150W. Key specifications include 20V gate-source voltage, 10.4nF input capacitance, and 30ns turn-on delay.
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Infineon IPD100N06S403ATMA2 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.5mm |
| Input Capacitance | 10.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 3.5mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 3.5mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
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