N-channel MOSFET with 40V drain-source breakdown voltage and 40A continuous drain current. Features low 10.5mΩ Rds(on) and 1.9nF input capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 42W. Packaged in a surface-mount TO-252 case, this RoHS-compliant component offers fast switching with turn-on delay of 3.7ns and fall time of 2.8ns.
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Infineon IPD105N04LG technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 1.9nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 10.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 3.7ns |
| Width | 6.22mm |
| RoHS | Compliant |
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