Power Field-Effect Transistor, 30A I(D), 25V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, TO-252, 3 PIN
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Infineon IPD10N03LA technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance | 1.358nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 10.4mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| DC Rated Voltage | 25V |
| RoHS | Not Compliant |
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