N-Channel Power MOSFET, 120V drain-source voltage, 75A continuous drain current, and 0.011 ohm on-resistance. Features a single element silicon construction with a metal-oxide semiconductor field-effect transistor design. Encased in a TO-252 plastic package, this component operates across a temperature range of -55°C to 175°C.
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Technical Specifications
Infineon IPD110N12N3GATMA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD110N12N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD110N12N3GATMA1 to view detailed technical specifications.
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