The IPD110N12N3GBUMA1 is a high-power N-channel MOSFET from Infineon, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 136W and a continuous drain current of 75A. The device is packaged in a TO-252-3 case and is designed for surface mount applications. It is lead-free and RoHS compliant, making it suitable for a wide range of applications.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD110N12N3GBUMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.31nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD110N12N3GBUMA1 Datasheet
Download the complete datasheet for Infineon IPD110N12N3GBUMA1 to view detailed technical specifications.
No datasheet is available for this part.