N-Channel Power MOSFET, 100V Vdss, 59A Continuous Drain Current (ID), and 12.2mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-252-3 package for surface mounting and offers a maximum power dissipation of 94W. With an input capacitance of 2.5nF and an operating temperature range of -55°C to 175°C, it is designed for high-performance applications. RoHS compliant and packaged in cut tape.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD122N10N3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 2.5nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 12.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD122N10N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD122N10N3GATMA1 to view detailed technical specifications.
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