N-Channel Power MOSFET, 60V Vds, 50A continuous drain current, and 12.7mΩ Rds(on). This single-element silicon Metal-Oxide-Semiconductor FET features a TO-252 package for surface mounting. It operates within a temperature range of -55°C to 175°C and offers a maximum power dissipation of 136W. Key switching characteristics include a 9ns turn-on delay and a 13ns fall time.
PackageTO-252
Current Rating50A
MountingSurface Mount
Power136W
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Technical Specifications
Infineon IPD127N06LGBTMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 2.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 136W |
| Radiation Hardening | No |
| Rds On Max | 12.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD127N06LGBTMA1 Datasheet
Download the complete datasheet for Infineon IPD127N06LGBTMA1 to view detailed technical specifications.
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