Infineon
IPD12CN10NGXT
Power Field-Effect Transistor, 67A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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Technical Specifications
Infineon IPD12CN10NGXT technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPD12CN10NGXT Datasheet
Download the complete datasheet for Infineon IPD12CN10NGXT to view detailed technical specifications.
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