N-channel Power MOSFET featuring 30V drain-source voltage and 30A continuous drain current. Offers a low 13.5mΩ drain-source on-resistance. Designed for efficient switching with fast turn-on (3ns) and turn-off (12ns) delay times, and a 2.2ns fall time. Operates within a wide temperature range of -55°C to 175°C, with a maximum power dissipation of 31W. Packaged in a TO-252-3 surface-mount package, this RoHS compliant component is supplied on tape and reel.
PackageTO-252-3
PolarityN-CHANNEL
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Technical Specifications
Infineon IPD135N03LGATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 1nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 13.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD135N03LGATMA1 Datasheet
Download the complete datasheet for Infineon IPD135N03LGATMA1 to view detailed technical specifications.
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