N-channel Power MOSFET featuring 30V drain-source voltage and 30A continuous drain current. Offers a low 13.5mΩ drain-source on-resistance. Designed for efficient switching with fast turn-on (3ns) and turn-off (12ns) delay times, and a 2.2ns fall time. Operates within a wide temperature range of -55°C to 175°C, with a maximum power dissipation of 31W. Packaged in a TO-252-3 surface-mount package, this RoHS compliant component is supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD135N03LGATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD135N03LGATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 1nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 13.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD135N03LGATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
